Some tradeoffs in ingot shaping and price of solar photovoltaic modules

Growth of round ingots is cost-effective for sheets but leaves unused space when round cells are packed into a module. This reduces the packing efficiency, which approaches 95% for square cells, to about 78% and reduces the conversion efficiency of the module by the same ratio. Shaping these ingots into squares with regrowth of cut silicon improves the packing factor, but increases growth cost. The cost impact on solar cell modules was determined by considering shaping ingots in stages from full round to complete square. The sequence of module production with relevant price allocation guidelines is outlined. The severe penalties in add-on price due to increasing slice thickness and kerf are presented. Trade-offs between advantages of recycling silicon and shaping costs are developed for different slicing scenarios. It is shown that shaping results in cost saving of up to 21% for a 15 cm dia. ingot

High-efficiency silicon solar cell research

Progress reports on research in high-efficiency silicon solar cells were presented by eight contractors and JPL. The presentations covered the issues of Bulk and Surface Loss, Modeling, Measurements, and Proof of Concept

Low defect, high purity crystalline layers grown by selective deposition

The purity and perfection of a semiconductor is improved by depositing a patterned mask of a material impervious to impurities of the semiconductor on a surface of a blank. When a layer of semiconductor is grown on the mask, the semiconductor will first grow from the surface portions exposed by the openings in the mask and will bridge the connecting portions of the mask to form a continuous layer having improved purity, since only the portions overlying the openings are exposed to defects and impurities

New high-efficiency silicon solar cells

A design for silicon solar cells was investigated as an approach to increasing the cell open-circuit voltage and efficiency for flat-plate terrestrial photovoltaic applications. This deviates from past designs, where either the entire front surface of the cell is covered by a planar junction or the surface is textured before junction formation, which results in an even greater (up to 70%) junction area. The heavily doped front region and the junction space charge region are potential areas of high recombination for generated and injected minority carriers. The design presented reduces junction area by spreading equidiameter dot junctions across the surface of the cell, spaced about a diffusion length or less from each other. Various dot diameters and spacings allowed variations in total junction area. A simplified analysis was done to obtain a first-order design optimization. Efficiencies of up to 19% can be obtained. Cell fabrication involved extra masking steps for selective junction diffusion, and made surface passivation a key element in obtaining good collection. It also involved photolithography, with line widths down to microns. A method is demonstrated for achieving potentially high open-circuit voltages and solar-cell efficiencies

Copper doped polycrystalline silicon solar cell

Fabrication of improved performance photovoltaic cells is described. They are fabricated from polycrystalline silicon containing copper segregated at the grain boundaries

Advanced Czochralski silicon growth technology for photovoltaic modules

Several economic analyses had indicated that large-diameter, multiple ingot growth using a single crucible with melt replenishment would be required for Cz growth to be economically viable. Based on the results of these analyses, two liquid and two solid feed melt replenishment approaches were initiated. The sequential solid feed melt replenishment approach, which demonstrated elements of technical feasibility is described in detail in this paper. Growth results of multiple ingots (10-cm-diameter, totaling 100 kg; and 15-cm-diameter, totaling 150 kg weight per crucible) are presented. Solar cells were fabricated and analyzed to evaluate the effects of structure and chemical purities as a result of multiple growth. The results indicate that, with semiconductor-grade silicon, feedstock impurity build-up does not seem to degrade cell performance. For polycrystalline cells, the average efficiencies are 15 to 25% lower than those of single crystalline cells. Concerns regarding single crystal yields, crucible quality and growth speed are indicated, and present status and future research thrusts are also discussed

Power system applications of fiber optics

Power system applications of optical systems, primarily using fiber optics, are reviewed. The first section reviews fibers as components of communication systems. The second section deals with fiber sensors for power systems, reviewing the many ways light sources and fibers can be combined to make measurements. Methods of measuring electric field gradient are discussed. Optical data processing is the subject of the third section, which begins by reviewing some widely different examples and concludes by outlining some potential applications in power systems: fault location in transformers, optical switching for light fired thyristors and fault detection based on the inherent symmetry of most power apparatus. The fourth and final section is concerned with using optical fibers to transmit power to electric equipment in a high voltage situation, potentially replacing expensive high voltage low power transformers. JPL has designed small photodiodes specifically for this purpose, and fabricated and tested several samples. This work is described

Characterization of grain boundaries in silicon

Zero-bias conductance and capacitance measurements at various temperatures were used to study trapped charges and potential barrier height at the boundaries. Deep-level transient spectroscopy (DLTS) was applied to measure the density of states at the boundary. A study of photoconductivity of grain boundaries in p-type silicon demonstrated the applicability of the technique in the measurement of minority carrier recombination velocity at the grain boundary. Enhanced diffusion of phosphorus at grain boundaries in three cast polycrystalline photovoltaic materials was studied. Enhancements for the three were the same, indicating that the properties of boundaries are similar, although grown by different techniques. Grain boundaries capable of enhancing the diffusion were found always to have strong recombination activities; the phenomena could be related to dangling bonds at the boundaries. Evidence that incoherent second-order twins of (111)/(115) type are diffusion-active is presented

Pengaruh Kinerja Keuangan terhadap Return Saham Perusahaan Manufaktur Sektor Industri Barang Konsumsi yang Terdaftar di Bursa Efek Indonesia

The purpose of this research is to explain the effect of financial performance to the stock return. The financial performances in this research were Earning Per Share, Price Earning Ratio, Debt to Equity Ratio, Return On Assets, andNet Profit Margin. The financial performance as the independent variables and the dependent variabel is stock return.The sample of this research is thirty manufacturing company of consumer goods industry sector. These companies are listed on the Indonesia Stock Exchange since 2012 until 2014. The sampling method is purposive sampling. The analysis method used in this research that is with hypothesis test that is determinant coefficient, test F, and test t. Using thirty manufacturing companies listed in IDX, this research shows that the Earning Per Share, Price Earning Ratio and the Net Profit Margin has a positive and significant impact on stock returns. Instead, the variable Debt to Equity Ratio has a negative influence. This research also indicate that variable Return On Assets has no effect on stock returns

Measurement of surface recombination velocity for silicon solar cells using a scanning electron microscope with pulsed beam

The role of surface recombination velocity in the design and fabrication of silicon solar cells is discussed. A scanning electron microscope with pulsed electron beam was used to measure this parameter of silicon surfaces. It is shown that the surface recombination velocity, s, increases by an order of magnitude when an etched surface degrades, probably as a result of environmental reaction. A textured front-surface-field cell with a high-low junction near the surface shows the effect of minority carrier reflection and an apparent reduction of s, whereas a tandem-junction cell shows an increasing s value. Electric fields at junction interfaces in front-surface-field and tandem-junction cells acting as minority carrier reflectors or sinks tend to alter the value of effective surface recombination velocity for different beam penetration depths. A range of values of s was calculated for different surfaces